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| (R) STPS640CT/CF/CB POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n n n n n n n 2x3A 40 V 150 C 0.57 V A1 K A2 K n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD DROP VOLTAGE LOW CAPACITANCE LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2000V DC Capacitance = 12pF SMD PACKAGE (tape and reel option: -TR) AVALANCHE CAPABILITY SPECIFIED A2 A1 DPAK STPS640CB DESCRIPTION Dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters. This device is intended for use in low and medium voltage operation, and particulary, in high frequency circuitries where low switching losses are required (free wheeling and polarity protection). ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 Parameter Repetitive peak reverse voltage TO-220AB / ISOWATT220AB DPAK TO-220AB ISOWATT220AB DPAK IFSM IRRM PARM Tstg Tj dV/dt Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage tp = 2 s tp = 1s Tc = 135C Tc = 130C Tc = 120C 75 1 1300 - 65 to + 150 150 10000 Value 40 10 6 3 A1 K A2 A1 K A2 TO-220AB STPS640CT ISOWATT220AB STPS640CF Unit V A A tp = 10 ms Sinusoidal F = 1kHz square Tj = 25C A A W C C V/s 1/7 July 2003 - Ed: 5A STPS640CT/CF/CB THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB/ DPAK ISOWATT220AB Rth(c) Coupling TO-220AB ISOWATT220AB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Per diode Total Per diode Total Value 5.5 3 7.5 5.2 0.5 3 C/W Unit C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. VR = VRRM Typ. 2 Max. 100 10 0.63 0.84 Unit A mA V IF = 3 A IF = 6 A IF = 3 A IF = 6 A 0.5 0.67 0.57 0.72 To evaluate the maximum conduction losses use the following equation : P = 0.42 x IF(AV) + 0.050 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0.0 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average current versus ambient temperature ( = 0.5, per diode). IF(av)(A) 4.0 3.5 Rth(j-a)=Rth(j-c) TO-220AB/DPAK =1 3.0 ISOWATT220AB 2.5 2.0 1.5 Rth(j-a)=15C/W T T 1.0 tp IF(av) (A) 0.5 1.0 1.5 2.0 2.5 =tp/T 0.5 4.0 =tp/T tp Tamb(C) 50 75 100 125 150 3.0 3.5 0.0 0 25 2/7 STPS640CT/CF/CB Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (TO-220AB / DPAK). IM(A) 45 40 35 30 25 20 15 IM 10 5 0 1E-3 Fig. 5-2: Non repetitive surge peak forward current versus overload duration. (Maximum values, per diode) (ISOWATT220AB). IM(A) 40 35 30 25 Tc=75C Tc=100C Tc=135C t 20 15 10 5 0 1E-3 IM t Tc=75C Tc=100C Tc=130C =0.5 t(s) 1E-2 1E-1 1E+0 =0.5 t(s) 1E-2 1E-1 1E+0 Fig. 6.1: Relative variation of thermal transient impedance junction to case versus pulse duration (TO-220AB / DPAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 6-2: Relative variation of thermal transient impedance junction to case versus pulse duration (ISOWATT220AB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.2 = 0.5 = 0.2 = 0.1 Single pulse 0.2 tp(s) 1E-2 1E-1 =tp/T tp = 0.1 T Single pulse tp(s) 1E+0 0.0 1E-3 =tp/T tp 1E-2 1E-1 1E+0 1E+1 3/7 STPS640CT/CF/CB Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) 1E-2 Tj=150C Tj=125C Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 500 F=1MHz Tj=25C 1E-3 100 Tj=100C 1E-4 Tj=75C 1E-5 VR(V) 0 5 10 15 20 25 30 35 40 10 VR(V) 1 2 5 10 20 50 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). Fig. 10: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 80 70 60 50 10.0 IFM(A) Typical values Tj=150C 1.0 Tj=125C 40 30 20 VFM(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 0 0 4 8 12 S(Cu) (cm) 16 20 24 28 32 36 40 4/7 STPS640CT/CF/CB PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Millimeters Min. H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 5/7 STPS640CT/CF/CB PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8 FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 3 3 1.6 2.3 2.3 1.6 6/7 STPS640CT/CF/CB PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 Ordering type STPS640CT STPS640CB STPS640CB-TR STPS640CF n Marking STPS640CT S640C S640C STPS640CF Package TO-220AB DPAK DPAK ISOWATT220AB Weight 2.20g 0.30g 0.30g 2.08g Base qty 50 75 2500 50 Delivery mode Tube Tube Tape and reel Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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